| PART |
Description |
Maker |
| HYB18H256321BF-11/12/14 HYB18H256321BF-10 HYB18H25 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.21 ns, PBGA136
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 256兆GDDR3显卡内存GDDR3显卡内存
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
|
Qimonda AG
|
| HYB18H512321AF-12 HYB18H512321AFL14 HYB18H512321AF |
512-Mbit GDDR3 Graphics RAM
|
Infineon
|
| W641GG2JB |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| CY62148EV30LL-55ZSXET |
4-Mbit (512 K x 8) Static RAM
|
Cypress
|
| CY62148ESL-55ZAXAT CY62148ESL-55ZAXI CY62148ESL-55 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1062DV33-10BGIT CY7C1062DV33-10BGXI CY7C1062DV |
16-Mbit (512 K 32) Static RAM
|
Cypress
|
| CY62157EV30LL-55ZSXET |
8-Mbit (512 K 16) Static RAM
|
Cypress
|
| CY62148ESL-55ZAXA CY62148ESL-55ZAXI CY62148ESL10 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
